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MJE210STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE210STU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 6168
- Description: MJE210STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 15W |
| Current Rating | -5A |
| Frequency | 65MHz |
| Base Part Number | MJE210 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 15W |
| Gain Bandwidth Product | 65MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 65MHz |
| Collector Emitter Saturation Voltage | -1.8V |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | -40V |
| Emitter Base Voltage (VEBO) | -8V |
| hFE Min | 45 |
| Height | 11mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJE210STU Overview
This device has a DC current gain of 45 @ 2A 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -1.8V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1A, 5A.Emitter base voltages of -8V can achieve high levels of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 65MHz.A breakdown input voltage of 25V volts can be used.Maximum collector currents can be below 5A volts.
MJE210STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210STU Applications
There are a lot of ON Semiconductor MJE210STU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
