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MJE182G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE182G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4894
- Description: MJE182G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 12.5W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJE182 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 12.5W |
| Power - Max | 1.5W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 50 |
| Height | 11.0998mm |
| Length | 7.7978mm |
| Width | 2.9972mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
MJE182G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.The collector emitter saturation voltage is 1.7V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.The part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 3A volts.
MJE182G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE182G Applications
There are a lot of ON Semiconductor MJE182G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
