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MJE18006G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE18006G
- Package: TO-220-3
- Datasheet:
- Stock: 9641
- Description: MJE18006G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 100W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6A |
| Frequency | 14MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 14MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 3A 1V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 14MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 14 |
| Height | 9.28mm |
| Length | 10.28mm |
| Width | 4.82mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJE18006G Overview
This device has a DC current gain of 6 @ 3A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 9V can achieve high levels of efficiency.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJE18006G Features
the DC current gain for this device is 6 @ 3A 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 6A
a transition frequency of 14MHz
MJE18006G Applications
There are a lot of ON Semiconductor MJE18006G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
