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MJE18002G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE18002G
- Package: TO-220-3
- Datasheet:
- Stock: 4606
- Description: MJE18002G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 50W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 13MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 13MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 13MHz |
| Collector Emitter Saturation Voltage | 920mV |
| Collector Base Voltage (VCBO) | 9V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 14 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJE18002G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 200mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 920mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.As a result, the part has a transition frequency of 13MHz.During maximum operation, collector current can be as low as 2A volts.
MJE18002G Features
the DC current gain for this device is 14 @ 200mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
a transition frequency of 13MHz
MJE18002G Applications
There are a lot of ON Semiconductor MJE18002G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
