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MJE13009G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE13009G
- Package: TO-220-3
- Datasheet:
- Stock: 5698
- Description: MJE13009G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 12A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A 5V |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Height | 9.28mm |
| Length | 10.28mm |
| Width | 4.82mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | CONSULT SALES OFFICE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 2W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 12A |
| Frequency | 4MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
MJE13009G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 5A 5V DC current gain.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 12A.As a result, the part has a transition frequency of 4MHz.During maximum operation, collector current can be as low as 12A volts.
MJE13009G Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
MJE13009G Applications
There are a lot of ON Semiconductor MJE13009G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
