MJD6039T4G

MJD6039T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJD6039T4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 8391
  • Description: MJD6039T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD6039
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 2A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MJD6039T4G Overview


This device has a DC current gain of 500 @ 2A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 8mA, 2A.A constant collector voltage of 4A is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor can be broken down at a voltage of 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

MJD6039T4G Features


the DC current gain for this device is 500 @ 2A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

MJD6039T4G Applications


There are a lot of ON Semiconductor MJD6039T4G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

In Stock

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