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MJD45H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD45H11T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3724
- Description: MJD45H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -8A |
| Frequency | 90MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD45H11 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.75W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 90MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A 1V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 90MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 5V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 hour ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MJD45H11T4G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.In this part, there is a transition frequency of 90MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJD45H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz
MJD45H11T4G Applications
There are a lot of ON Semiconductor MJD45H11T4G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
