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MJD44H11G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD44H11G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1950
- Description: MJD44H11G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 1.75W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 85MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A 1V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 85MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 5V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 8A |
| Frequency | 85MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD44H11 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
MJD44H11G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 85MHz.During maximum operation, collector current can be as low as 8A volts.
MJD44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz
MJD44H11G Applications
There are a lot of ON Semiconductor MJD44H11G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
