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MJD340T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD340T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1132
- Description: MJD340T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Power Dissipation | 1.56W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD340 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.56W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100μA |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 300V |
| Frequency - Transition | 10MHz |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 30 |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 300V |
MJD340T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Keeping the emitter base voltage at 3V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.This device can take an input voltage of 300V volts before it breaks down.During maximum operation, collector current can be as low as 500mA volts.
MJD340T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340T4G Applications
There are a lot of ON Semiconductor MJD340T4G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
