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MJD32CQ-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-MJD32CQ-13
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3358
- Description: MJD32CQ-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 15W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 15W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 1.2V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 6V |
| RoHS Status | ROHS3 Compliant |
MJD32CQ-13 Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.3MHz is present in the transition frequency.Breakdown input voltage is 100V volts.The maximum collector current is 3A volts.
MJD32CQ-13 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz
MJD32CQ-13 Applications
There are a lot of Diodes Incorporated MJD32CQ-13 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
