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MJD31CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD31CRLG
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8698
- Description: MJD31CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.56W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD31 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.56W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 1.2V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJD31CRLG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.
MJD31CRLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CRLG Applications
There are a lot of ON Semiconductor MJD31CRLG applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
