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MJD3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD3055G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1299
- Description: MJD3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 10A |
| Frequency | 2MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD3055 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.75W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 2MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Base Voltage (VCBO) | 70V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
MJD3055G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.The part has a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 10A volts.
MJD3055G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055G Applications
There are a lot of ON Semiconductor MJD3055G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
