MJD2955TF

MJD2955TF Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.A collector emitter saturation voltage of -1.1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.As you can see, the part has a transition frequency of 2MHz.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

MJD2955TF Features

the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJD2955TF Applications

There are a lot of ON Semiconductor MJD2955TF applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting