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MJD2955T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD2955T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4639
- Description: MJD2955T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -10A |
| Frequency | 2MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD2955 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 2MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 70V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
MJD2955T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.2MHz is present in the transition frequency.Input voltage breakdown is available at 60V volts.During maximum operation, collector current can be as low as 10A volts.
MJD2955T4G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJD2955T4G Applications
There are a lot of ON Semiconductor MJD2955T4G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
