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MJD243T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD243T4
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1524
- Description: MJD243T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.4W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 4A |
| Frequency | 40MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MJD243 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.4W |
| Case Connection | COLLECTOR |
| Power - Max | 12.5W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 40MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 40 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MJD243T4 Overview
DC current gain in this device equals 40 @ 200mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 40MHz.As a result, it can handle voltages as low as 100V volts.In extreme cases, the collector current can be as low as 4A volts.
MJD243T4 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243T4 Applications
There are a lot of ON Semiconductor MJD243T4 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
