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MJD243G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD243G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6917
- Description: MJD243G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.4W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Frequency | 40MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD243 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.4W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 40MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 40 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJD243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.In the part, the transition frequency is 40MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
MJD243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243G Applications
There are a lot of ON Semiconductor MJD243G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
