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MJD200G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD200G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4537
- Description: MJD200G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 1.4W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 65MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD200 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.4W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 65MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 65MHz |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 70 |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
MJD200G Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1A, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.
MJD200G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200G Applications
There are a lot of ON Semiconductor MJD200G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
