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MJD18002D2T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD18002D2T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6834
- Description: MJD18002D2T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 13MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 1A 1V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 13MHz |
| Max Breakdown Voltage | 450V |
| Collector Base Voltage (VCBO) | 1kV |
| Emitter Base Voltage (VEBO) | 11V |
| hFE Min | 14 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | FREE WHEELING DIODE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 50W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 13MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD18002 |
MJD18002D2T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 6 @ 1A 1V DC current gain.A VCE saturation (Max) of 750mV @ 200mA, 1A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 11V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As a result, the part has a transition frequency of 13MHz.The breakdown input voltage is 450V volts.Maximum collector currents can be below 2A volts.
MJD18002D2T4G Features
the DC current gain for this device is 6 @ 1A 1V
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 11V
the current rating of this device is 2A
a transition frequency of 13MHz
MJD18002D2T4G Applications
There are a lot of ON Semiconductor MJD18002D2T4G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
