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MJD127TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD127TF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5462
- Description: MJD127TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Current Rating | -8A |
| Base Part Number | MJD127 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 1.75W |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A 4V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 1000 |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJD127TF Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.Input voltage breakdown is available at 100V volts.A maximum collector current of 8A volts can be achieved.
MJD127TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
MJD127TF Applications
There are a lot of ON Semiconductor MJD127TF applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
