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MJD122G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD122G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5500
- Description: MJD122G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 8A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJD122 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1.75W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A 4V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 2V |
| Frequency - Transition | 4MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Continuous Collector Current | 8A |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
MJD122G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 80mA, 8A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.Parts of this part have transition frequencies of 4MHz.When collector current reaches its maximum, it can reach 8A volts.
MJD122G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz
MJD122G Applications
There are a lot of ON Semiconductor MJD122G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
