MJD117TF

MJD117TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJD117TF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 9889
  • Description: MJD117TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating -2A
Base Part Number MJD117
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 20W
Power - Max 1.75W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 1000
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

MJD117TF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 40mA, 4A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -2A current rating.Parts of this part have transition frequencies of 25MHz.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

MJD117TF Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 25MHz

MJD117TF Applications


There are a lot of ON Semiconductor MJD117TF applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

In Stock

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