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MJD112RL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJD112RL
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4086
- Description: MJD112RL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A 3V |
| Current - Collector Cutoff (Max) | 20μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 25MHz |
| Frequency - Transition | 25MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 2A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | OBSOLETE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MJD112 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 20W |
MJD112RL Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 2A is necessary for high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 25MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
MJD112RL Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112RL Applications
There are a lot of ON Semiconductor MJD112RL applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
