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MJB44H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJB44H11T4G
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 4269
- Description: MJB44H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 50W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 10A |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJB44H11 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A 1V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 5V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Height | 4.83mm |
| Length | 10.29mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJB44H11T4G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.As a result, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 80V volts.Collector current can be as low as 10A volts at its maximum.
MJB44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11T4G Applications
There are a lot of ON Semiconductor MJB44H11T4G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
