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MJB44H11T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-MJB44H11T4
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 9462
- Description: MJB44H11T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 50W |
| Base Part Number | MJB44 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 50W |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A 1V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Collector Emitter Breakdown Voltage | 80V |
| Max Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Continuous Collector Current | 10A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJB44H11T4 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 10A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.
MJB44H11T4 Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
MJB44H11T4 Applications
There are a lot of STMicroelectronics MJB44H11T4 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
