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MJ2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ2955G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 5649
- Description: MJ2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| Height | 26.67mm |
| Length | 39.37mm |
| Width | 8.509mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 115W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Frequency | 2.5MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJ2955 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 115W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 2.5MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
| Current - Collector Cutoff (Max) | 700μA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 2.5MHz |
| Collector Emitter Saturation Voltage | 1.1V |
MJ2955G Overview
In this device, the DC current gain is 20 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -15A.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz
MJ2955G Applications
There are a lot of ON Semiconductor MJ2955G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
