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MJ15016G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ15016G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 5306
- Description: MJ15016G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 14 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -120V |
| Max Power Dissipation | 180W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Frequency | 18MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Case Connection | COLLECTOR |
| Power - Max | 115W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 18MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 4A 2V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 7A, 15A |
| Collector Emitter Breakdown Voltage | 120V |
| Transition Frequency | 2.2MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 10 |
| Height | 8.51mm |
| Length | 39.37mm |
| Width | 26.67mm |
| Radiation Hardening | No |
MJ15016G Overview
DC current gain in this device equals 10 @ 4A 2V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.In this part, there is a transition frequency of 2.2MHz.The maximum collector current is 15A volts.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor MJ15016G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
