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MJ15015G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ15015G
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 9284
- Description: MJ15015G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 120V |
| Max Power Dissipation | 180W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 15A |
| Frequency | 6MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 6MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 4A 2V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 7A, 15A |
| Collector Emitter Breakdown Voltage | 120V |
| Transition Frequency | 0.8MHz |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 10 |
| Height | 8.51mm |
| Length | 39.37mm |
| Width | 26.67mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJ15015G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 4A 2V.As it features a collector emitter saturation voltage of 1.1V, it allows for maximum design flexibility.A VCE saturation (Max) of 5V @ 7A, 15A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 7V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.The part has a transition frequency of 0.8MHz.The maximum collector current is 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor MJ15015G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
