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MJ11033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ11033G
- Package: TO-204AE
- Datasheet:
- Stock: 5709
- Description: MJ11033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 50A |
| Height | 8.51mm |
| Length | 38.86mm |
| Width | 26.67mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Surface Mount | NO |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tray |
| Published | 2002 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -120V |
| Max Power Dissipation | 300W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 120V |
| Max Collector Current | 50A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A 5V |
| Current - Collector Cutoff (Max) | 2mA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
| Collector Emitter Breakdown Voltage | 120V |
MJ11033G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is recommended to keep the continuous collector voltage at 50A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 50A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The maximum collector current is 50A volts.
MJ11033G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11033G Applications
There are a lot of ON Semiconductor MJ11033G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
