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MJ11030G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ11030G
- Package: TO-204AE
- Datasheet:
- Stock: 7218
- Description: MJ11030G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Surface Mount | NO |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tray |
| Published | 2008 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 90V |
| Max Power Dissipation | 300W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 90V |
| Max Collector Current | 50A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A 5V |
| Current - Collector Cutoff (Max) | 2mA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
| Collector Emitter Breakdown Voltage | 90V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJ11030G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.When collector current reaches its maximum, it can reach 50A volts.
MJ11030G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11030G Applications
There are a lot of ON Semiconductor MJ11030G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
