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MJ11028G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJ11028G
- Package: TO-204AE
- Datasheet:
- Stock: 9684
- Description: MJ11028G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Surface Mount | NO |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tray |
| Published | 2002 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 300W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 50A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A 5V |
| Current - Collector Cutoff (Max) | 2mA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 50A |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50A.Collector current can be as low as 50A volts at its maximum.
MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11028G Applications
There are a lot of ON Semiconductor MJ11028G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
