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MD2009DFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-MD2009DFP
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 4213
- Description: MD2009DFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Other Transistors |
| Max Power Dissipation | 40W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MD2009 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation | 40W |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 700V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5.5A 5V |
| Current - Collector Cutoff (Max) | 200μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 1.4A, 5.5A |
| Collector Emitter Breakdown Voltage | 700V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 5 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MD2009DFP Overview
This device has a DC current gain of 5 @ 5.5A 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 1.4A, 5.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.A maximum collector current of 10A volts can be achieved.
MD2009DFP Features
the DC current gain for this device is 5 @ 5.5A 5V
the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
the emitter base voltage is kept at 7V
MD2009DFP Applications
There are a lot of STMicroelectronics MD2009DFP applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
