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ContactMCH6664-TL-W
ON SEMICONDUCTOR MCH6664-TL-W Dual MOSFET, Dual P Channel, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
- Manufacturer: ON Semiconductor
- NO: 598-MCH6664-TL-W
- Package: 6-SMD, Flat Leads
- Datasheet:
- Stock: 7172
- Description: ON SEMICONDUCTOR MCH6664-TL-W Dual MOSFET, Dual P Channel, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Number of Pins | 6 |
| Weight | 7.512624mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 800mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 800mW |
| Turn On Delay Time | 4 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 325m Ω @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 82pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
| Rise Time | 3.3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 5.4 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 1.5A |
| Threshold Voltage | -2.6V |
| Gate to Source Voltage (Vgs) | 20V |
| FET Feature | Logic Level Gate |
| Height | 850μm |
| Length | 2mm |
| Width | 1.6mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
