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MBRD660CTT4G Schottky diode and rectifier 6A 60V
- Manufacturer: ON Semiconductor
- NO: 598-MBRD660CTT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4983
- Description: MBRD660CTT4G Schottky diode and rectifier 6A 60V(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 13 hours ago) |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | SWITCHMODE™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Length | 6.73mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 6A |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | FREE WHEELING DIODE |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| REACH SVHC | No SVHC |
| Height | 2.38mm |
| Width | 6.22mm |
| Mounting Type | Surface Mount |
| Voltage - Rated DC | 60V |
| HTS Code | 8541.10.00.80 |
| JESD-609 Code | e3 |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Base Part Number | MBRD660CT |
| Pin Count | 3 |
| Surface Mount | YES |
| JESD-30 Code | R-PSSO-G2 |
| Diode Element Material | SILICON |
| Number of Elements | 2 |
| Diode Type | Schottky |
| Output Current-Max | 3A |
| Application | FAST RECOVERY POWER |
| Number of Phases | 1 |
| Forward Current | 6A |
| Forward Voltage | 900mV |
| Halogen Free | Halogen Free |
| Max Surge Current | 75A |
| Element Configuration | Common Cathode |
| Max Reverse Leakage Current | 100μA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100μA @ 60V |
| Voltage - Forward (Vf) (Max) @ If | 700mV @ 3A |
| Operating Temperature - Junction | -65°C~175°C |
| Max Reverse Voltage (DC) | 60V |
| Average Rectified Current | 3A |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 60V |
| Peak Non-Repetitive Surge Current | 75A |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 75A |
Schottky diode with rectifier 6A 60V
MBRD660CTT4G Overview
A forward voltage of 900mV will enable the device to operate.An output voltage of 3A is the maximum it can handle.Keeping the surge current under 75A and preventing it from exceeding it should be the rule.The device operates when the forward voltage is set to 6A.Parts can be powered by currents of 6A.A reverse voltage peak of 100μA is used to power devices like this one.A semiconductor device's maximum reverse leakage current is 100μA, which is the current created by its reverse bias.
MBRD660CTT4G Features
900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA
MBRD660CTT4G Applications
There are a lot of ON Semiconductor MBRD660CTT4G applications of rectifier diode array.
- Free wheeling diode in low voltage converters
- Crowbar applications
- Battery chargers
- Rectifiers for UBS
- Rectifiers in switch mode power supplies (SMPS)
- General Rectification
- Rectifier for drives applications
