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ContactMBRD1035CTLT4G
MBRD1035CTLT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MBRD1035CTLT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 9235
- Description: MBRD1035CTLT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Voltage - Rated DC | 35V |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBRD1035CTL |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 2mA @ 35V |
| Voltage - Forward (Vf) (Max) @ If | 470mV @ 5A |
| Forward Current | 10A |
| Max Reverse Leakage Current | 2mA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 50A |
| Output Current-Max | 5A |
| Application | POWER |
| Halogen Free | Halogen Free |
| Forward Voltage | 560mV |
| Max Reverse Voltage (DC) | 35V |
| Average Rectified Current | 5A |
| Number of Phases | 1 |
| Peak Reverse Current | 2mA |
| Max Repetitive Reverse Voltage (Vrrm) | 35V |
| Peak Non-Repetitive Surge Current | 50A |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 50A |
| Height | 2.38mm |
| Length | 6.22mm |
| Width | 6.73mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MBRD1035CTLT4G Overview
Devices that have a forward voltage of 560mV will operate.A maximum output voltage of 5A can be supported.Array is important to monArrayor the surge current and make sure that Array does not exceed 50A.The device operates when the forward voltage is set to 10A.The part can be used to draw a current of 10A.In devices such as this one, reverse voltage peak is set at 2mA.When reverse biased, its maximum reverse leakage current is 2mA, which is the current coming from that semiconductor device.
MBRD1035CTLT4G Features
560mV forward voltage
a maximum output voltage of 5A
a peak voltage of 2mA
a reverse voltage peak of 2mA
MBRD1035CTLT4G Applications
There are a lot of ON Semiconductor MBRD1035CTLT4G applications of rectifier diode array.
- Free wheeling diode in low voltage converters
- Rectifier for drives applications
- Rectifiers for UBS
- General Rectification
- Rectifiers in switch mode power supplies (SMPS)
- Battery chargers
- Crowbar applications
