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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Length | 4.57mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Radiation Hardening | No |
| Number of Pins | 2 |
| Package / Case | DO-214AC, SMA |
| Height | 2mm |
| Width | 2.92mm |
| Mounting Type | Surface Mount |
| HTS Code | 8541.10.00.80 |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | J BEND |
| Base Part Number | MBRA1H100 |
| Pin Count | 2 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Number of Elements | 1 |
| Diode Type | Schottky |
| Output Current-Max | 1A |
| Forward Current | 1A |
| Forward Voltage | 840mV |
| Halogen Free | Halogen Free |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 40μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 760mV @ 1A |
| Operating Temperature - Junction | -65°C~175°C |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 1A |
| Peak Reverse Current | 4μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 50A |
| Max Forward Surge Current (Ifsm) | 50A |
Product Description:
The MBRA1H100T3G is a high-performance Schottky diode designed to provide efficient rectification and voltage regulation in various electronic circuits. This diode offers excellent power handling capabilities and low forward voltage drop, making it suitable for applications where energy efficiency and low power losses are crucial.
Features:
High Efficiency: The MBRA1H100T3G Schottky diode is engineered for high efficiency, enabling efficient conversion of electrical energy with minimal power losses.
Low Forward Voltage Drop: With its low forward voltage drop, this diode reduces energy loss during rectification, contributing to higher overall system efficiency.
Fast Switching Speed: The diode exhibits fast switching characteristics, making it suitable for applications that require rapid response times.
High Power Handling: The MBRA1H100T3G can handle relatively high power levels, allowing it to manage significant current flows without degradation in performance.
Robust Construction: Designed with robust materials and construction, this diode offers enhanced durability and reliability in various operating conditions.
Applications:
The MBRA1H100T3G Schottky diode finds versatile applications in electronic circuits and systems, including:
Rectification: It is commonly used for rectification purposes in power supplies, voltage regulators, and DC-DC converters, ensuring efficient conversion of AC to DC voltage.
Voltage Regulation: The diode's low forward voltage drop makes it suitable for voltage regulation tasks, maintaining a stable output voltage in various power management circuits.
Switching Circuits: Its fast switching speed makes it ideal for use in switching circuits, such as high-frequency signal rectification and pulse circuits.
Reverse Polarity Protection: The diode is employed to provide reverse polarity protection in circuits, preventing damage due to incorrect battery or power connections.
Energy Harvesting: The efficient characteristics of the MBRA1H100T3G make it suitable for energy harvesting applications, where it can help capture and convert ambient energy into usable power.
In summary, the MBRA1H100T3G Schottky diode is a versatile and efficient component for rectification, voltage regulation, switching, and protection in electronic circuits. Its low forward voltage drop, fast switching speed, and robust design make it well-suited for a variety of applications that require high-performance energy conversion and efficient power management.
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