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MBD54DWT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MBD54DWT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 743
- Description: MBD54DWT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 10pF |
| Subcategory | Other Diodes |
| Voltage - Rated DC | 30V |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBD54D |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 2μA @ 25V |
| Power Dissipation | 150mW |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 2μA |
| Operating Temperature - Junction | 125°C Max |
| Max Surge Current | 600mA |
| Output Current-Max | 0.2A |
| Application | FAST RECOVERY |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 30V |
| Average Rectified Current | 200mA |
| Number of Phases | 1 |
| Reverse Recovery Time | 5 ns |
| Peak Reverse Current | 2μA |
| Max Repetitive Reverse Voltage (Vrrm) | 30V |
| Peak Non-Repetitive Surge Current | 600mA |
| Diode Configuration | 2 Independent |
| Max Forward Surge Current (Ifsm) | 600mA |
| Recovery Time | 5 ns |
| Reverse Test Voltage | 25V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MBD54DWT1G Overview
There will be no operation of this device when the forward voltage is set to 1V.0.2A is the maximum output voltage array can support.As a general rule, surge currents should be monitored and kept below 600mA.When the forward voltage is set to 200mA, this device will operate.In this case, the part can provide a current of 200mA.The device is capacitance-limited to approximately 10pF farads.The reverse voltage peak of this device is 2μA.When it's reverse biased, it's maximal reverse leakage current is 2μA.This electronic or electrical device creates 150mW of heat (energy loss) as a derivative of its primary action.
MBD54DWT1G Features
1V forward voltage
a maximum output voltage of 0.2A
10pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
MBD54DWT1G Applications
There are a lot of ON Semiconductor MBD54DWT1G applications of rectifier diode array.
- Rectifier for drives applications
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- Crowbar applications
- Battery chargers
- General Rectification
- Rectifiers for UBS
