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ContactLN100LA-G
LN100LA-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at Utmel
- Manufacturer: Microchip Technology
- NO: 536-LN100LA-G
- Package: 6-VFLGA
- Datasheet:
- Stock: 14538
- Description: LN100LA-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at Utmel(Kg)
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In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VFLGA |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -25°C~125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Terminal Form | BUTT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | 2 N-Channel (Cascoded) |
| Transistor Application | AMPLIFIER |
| Rds On (Max) @ Id, Vgs | 3000 Ω @ 2mA, 2.8V |
| Vgs(th) (Max) @ Id | 1.6V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Drain to Source Voltage (Vdss) | 1200V 1.2kV |
| Continuous Drain Current (ID) | 3mA |
| Gate to Source Voltage (Vgs) | 1.6V |
| Drain to Source Breakdown Voltage | 600V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
