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KST56MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KST56MTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1718
- Description: KST56MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | KST56 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -4V |
| hFE Min | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KST56MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -4V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.An input voltage of 80V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KST56MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST56MTF Applications
There are a lot of ON Semiconductor KST56MTF applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
