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KST5401MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KST5401MTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5156
- Description: KST5401MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -500mA |
| Frequency | 300MHz |
| Base Part Number | KST5401 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 60 |
| Height | 970μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
KST5401MTF Overview
This device has a DC current gain of 60 @ 50mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 45V volts.In extreme cases, the collector current can be as low as 500mA volts.
KST5401MTF Features
the DC current gain for this device is 60 @ 50mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
KST5401MTF Applications
There are a lot of ON Semiconductor KST5401MTF applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
