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KST43MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KST43MTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1130
- Description: KST43MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 200V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 500mA |
| Frequency | 50MHz |
| Base Part Number | KST43 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 200V |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 40 |
| Height | 970μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
KST43MTF Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 200V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KST43MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST43MTF Applications
There are a lot of ON Semiconductor KST43MTF applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
