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KST14MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KST14MTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7741
- Description: KST14MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 300mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | KST14 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 30V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
KST14MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.As you can see, the part has a transition frequency of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.When collector current reaches its maximum, it can reach 300mA volts.
KST14MTF Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
KST14MTF Applications
There are a lot of ON Semiconductor KST14MTF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
