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KSP44TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSP44TF
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5577
- Description: KSP44TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 300mA |
| Base Part Number | KSP44 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 400V |
| Max Frequency | 1MHz |
| Collector Emitter Saturation Voltage | 750mV |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 50 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSP44TF Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
KSP44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
KSP44TF Applications
There are a lot of ON Semiconductor KSP44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
