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KSP13BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSP13BU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 9426
- Description: KSP13BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 12 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 500mA |
| Base Part Number | KSP13 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSP13BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 125MHz.Collector current can be as low as 500mA volts at its maximum.
KSP13BU Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
KSP13BU Applications
There are a lot of ON Semiconductor KSP13BU applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
