KSH45H11ITU

KSH45H11ITU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSH45H11ITU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 4548
  • Description: KSH45H11ITU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.75W
Current Rating -8A
Frequency 40MHz
Base Part Number KSH45H11
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage -1V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
Height 6.1mm
Length 6.6mm
Width 2.3mm
Radiation Hardening No

KSH45H11ITU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 8A volts.

KSH45H11ITU Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz

KSH45H11ITU Applications


There are a lot of ON Semiconductor KSH45H11ITU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

In Stock

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