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KSH32CTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSH32CTF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5910
- Description: KSH32CTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 1.56W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | -1.2V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 10 |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 1.56W |
| Terminal Form | GULL WING |
| Current Rating | -3A |
| Frequency | 3MHz |
| Base Part Number | KSH32 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
KSH32CTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.A collector emitter saturation voltage of -1.2V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.As you can see, the part has a transition frequency of 3MHz.As a result, it can handle voltages as low as 100V volts.Collector current can be as low as 3A volts at its maximum.
KSH32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
KSH32CTF Applications
There are a lot of ON Semiconductor KSH32CTF applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
