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KSH2955TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSH2955TM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5631
- Description: KSH2955TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1.75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | -10A |
| Frequency | 2MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | KSH2955 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.75W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 2MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | -1.1V |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -70V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 20 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSH2955TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.The part has a transition frequency of 2MHz.Breakdown input voltage is 60V volts.A maximum collector current of 10A volts can be achieved.
KSH2955TM Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
KSH2955TM Applications
There are a lot of ON Semiconductor KSH2955TM applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
