KSH122TF

KSH122TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSH122TF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 2400
  • Description: KSH122TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 8A
Base Part Number KSH122
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.75W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-252AA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 4V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Height 2.4mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSH122TF Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 4V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

KSH122TF Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

KSH122TF Applications


There are a lot of ON Semiconductor KSH122TF applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

In Stock

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