KSH112GTM

KSH112GTM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-KSH112GTM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 5164
  • Description: KSH112GTM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Current Rating 2A
Base Part Number KSH112
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 20W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
RoHS Status RoHS Compliant
Lead Free Lead Free

KSH112GTM Overview


DC current gain in this device equals 1000 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.Continuous collector voltage should be kept at 2A for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).A maximum collector current of 2A volts is possible.

KSH112GTM Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A

KSH112GTM Applications


There are a lot of ON Semiconductor KSH112GTM applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

In Stock

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