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KSE350STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSE350STU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 734
- Description: KSE350STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Subcategory | Other Transistors |
| Voltage - Rated DC | -300V |
| Max Power Dissipation | 20W |
| Current Rating | -500mA |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | -300V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 30 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
KSE350STU Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 3MHz.An input voltage of 300V volts is the breakdown voltage.Collector current can be as low as 500mA volts at its maximum.
KSE350STU Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 3MHz
KSE350STU Applications
There are a lot of ON Semiconductor KSE350STU applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
