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KSE13003TH1ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-KSE13003TH1ATU
- Package: TO-220-3
- Datasheet:
- Stock: 3369
- Description: KSE13003TH1ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 30W |
| Current Rating | 1.5A |
| Frequency | 4MHz |
| Base Part Number | KSE13003 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 30W |
| Power - Max | 20W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Height | 14.2mm |
| Length | 9.9mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
KSE13003TH1ATU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 9 @ 500mA 2V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 4MHz.The maximum collector current is 1.5A volts.
KSE13003TH1ATU Features
the DC current gain for this device is 9 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSE13003TH1ATU Applications
There are a lot of ON Semiconductor KSE13003TH1ATU applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
